Белянин А.Ф. , Павлюкова Е.Р., Багдасарян А.С., Налимов С.А.
Ключевые слова: пленки нитрида алюминия, строение, магнетронное распыление, спектроскопия комбинационного рассеяния света
Аннотация
Рассмотрено влияние условий реактивного ВЧ-магнетронного распыления мишени из Al в газовой смеси аргона и азота на концентрацию, размер и ориентирование кристаллитов кристаллической фазы пленок AlN. Показана возможность контроля упорядочения кристаллической фазы пленок AlN по спектрам комбинационного рассеяния света.
Generation of textured crystalline phase for AlN films under hf reactive magnetron sputtering
А.F. Belyanin, E.R. Pavlyukova, A.S.Bagdasarian, S.А.Nalimov
Keywords: aluminum nitride films, structure, magnetron sputtering, Raman spectroscopy
Abstract
AlN films with a thickness from the several nm up to 10 μm were generated by reactive HF magnetron sputtering of Al target in a gas mixture of Argon and Nitrogen on substrates immobile relative to the target. AlN films consisted of crystalline and amorphous phases. The crystalline phase concentration changed depending on the generation conditions in the range of 0–90%. The AlN film crystallites, regardless of the substrate material, were axially textured along the crystallographic direction <0001>. The orientation of the texture axis for the film crystallites with respect to the substrate depended on the flow direction of the film-forming particles in the process of their generation. The results of x-ray phase analysis and Raman spectroscopy of AlN films with different concentration and structure of the crystalline phase are presented. The effect of the composition and pressure of the gas mixture, temperature, substrate material and position with respect to the target on the concentration and structure of the crystalline phase of AlN films is demonstrated. On sapphire substrates at the temperatures of ~ 500–800 K, the epitaxial growth of AlN films was detected.
